MRF479 RF BJT

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  • 3 MOTOROLA
  • 232 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 20V 0.4A 8-Pin SO

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Features Values Unit
Configuration Single Dual Base Dual Collector Quad Emitter
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.06(Typ)@20mA@100mA V
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 0.4 A
Maximum Emitter Base Voltage 2 V
Maximum Transition Frequency 1300(Typ) MHz
Minimum DC Current Gain 10@100mA@5V|5@360mA@5V
Number of Elements per Chip 1
Type NPN