MRF581A RF BJT

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  • 3 MOTOROLA
  • 5 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X

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Features Values Unit
Configuration Single Dual Emitter
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Voltage 15 V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 2.5 V
Maximum Operating Temperature 150 °C
Maximum Transition Frequency 5000(Typ) MHz
Minimum DC Current Gain 90@50mA@5V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Type NPN