MRF897 RF BJT

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  • 1 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 30V 4A 3-Pin NI-780S

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Features Values Unit
Configuration Dual Common Emitter
Material Si
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 4 V
Minimum DC Current Gain 30@1A@5V
Number of Elements per Chip 2
Output Power 30 W
Type NPN