MS1261 RF BJT

default part image

Datasheet: View

Stock

  • 2 ADVANCED POWER TECH
  • 235 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 18V 2.5A 4-Pin Case M-122

Request For Quote Datasheet
Features Values Unit
Configuration Single Dual Emitter
Maximum Collector Base Voltage 36 V
Maximum Collector Emitter Voltage 18 V
Maximum DC Collector Current 2.5 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 °C
Minimum DC Current Gain 20@250mA@5V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Output Power 15(Min) W
Type NPN