MS1261 RF BJT
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- 2 ADVANCED POWER TECH
- 235 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Maximum Collector Base Voltage | 36 | V |
| Maximum Collector Emitter Voltage | 18 | V |
| Maximum DC Collector Current | 2.5 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 20@250mA@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 15(Min) | W |
| Type | NPN |