MTM3N60 MOSFET

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  • 4727 NEW JERSEY SEMICONDUCTOR
  • 15 WORLD WIDE

Trans MOSFET N-CH Si 600V 3A

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Features Values Unit
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Material Si
Maximum Continuous Drain Current 3 A
Maximum Drain Source Voltage 600 V
Maximum Gate Source Voltage ᄆ20 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 75000 mW
Minimum Operating Temperature -65 ᄀC
Number of Elements per Chip 1