PE8050 GP BJT

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  • 82 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 25V 1.5A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.15@20mA@200mA 0.5@100mA@1A
Maximum Collector Emitter Voltage 25 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Type NPN