PN2221 GP BJT

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  • 495 NATIONAL SEMICONDUCTOR
  • 11036 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 30V 0.8A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@15mA@150mA 1.6@50mA@500mA
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN