PN4033 GP BJT

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  • 3 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 1A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.15@15mA@150mA 0.5@50mA@500mA
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 400 MHz
Type PNP