S2000AFI GP BJT

default part image

Datasheet: View

Stock

  • 1852 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) ISOWATT218

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@2A@4.5A V
Maximum Collector Emitter Voltage 700 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 7(Typ) MHz
Type NPN