S2000N GP BJT
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- 1874 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 1.5KV 8A 3-Pin(3+Tab) TO-3P(HIS)
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@2A@4.5A | 5@1A@4.5A |
| Maximum Collector Emitter Voltage | 1500 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Maximum Transition Frequency | 2(Typ) | MHz |
| Type | NPN |