SD1012 RF BJT

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  • 125 NEW JERSEY SEMICONDUCTOR
  • 2 SOLID STATE MANUFACTURING

Trans GP BJT NPN 18V 1A

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Features Values Unit
Maximum Collector Base Voltage 36 V
Maximum Collector Emitter Voltage 18 V
Maximum Collector Emitter Voltage Range <20 V
Maximum DC Collector Current 1 A
Maximum DC Collector Current Range 0.5 to 2 A
Maximum Emitter Base Voltage 4 V