SD1013-03 RF BJT

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  • 159 NEW JERSEY SEMICONDUCTOR

Trans RF BJT NPN 35V 1A 4-Pin Style M113

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Features Values Unit
Maximum Collector Base Voltage 65 V
Maximum Collector Cut-Off Current 1000000 nA
Maximum Collector Emitter Voltage 35 V
Maximum Collector Emitter Voltage Range 30 to 40 V
Maximum DC Collector Current 1 A
Maximum DC Collector Current Range 0.5 to 2 A
Maximum Emitter Base Voltage 4 V
Maximum Junction Case Thermal Resistance 13.5°C/W