SD1134-05 GP BJT

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  • 331 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 16V 0.75A 4-Pin Case M-123

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Features Values Unit
Category Bipolar Small Signal
Configuration Single Dual Emitter
Maximum Collector Base Voltage 36 V
Maximum Collector Emitter Voltage 16 V
Maximum DC Collector Current 0.75 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 5000 mW
Type NPN