SD1285 GP BJT

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  • 202 NEW JERSEY SEMICONDUCTOR
  • 19 RF POWER
  • 10 SOLID STATE SYSTEMS
  • 3 ST MICRO

Trans GP BJT NPN 18V 4.5A 4-Pin(4+Tab) Case M-113

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Features Values Unit
Type NPN
Configuration Single Dual Emitter
Maximum Collector Emitter Voltage 18 V
Maximum DC Collector Current 4.5 A