SDT5513 GP BJT

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  • 108 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 0.5A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Maximum Collector Emitter Saturation Voltage 0.35 V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 0.5 A
Maximum Power Dissipation 7000 mW
Type NPN