SDT5906 GP BJT

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  • 110 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 0.5A TO-66

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Features Values Unit
Category Bipolar Power
Maximum Collector Emitter Saturation Voltage 0.35 V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.5 A
Maximum Power Dissipation 35000 mW
Type NPN