SDT5952 GP BJT

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  • 411 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 175V 0.5A TO-66

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Features Values Unit
Category Bipolar Power
Maximum Collector Emitter Saturation Voltage 0.35 V
Maximum Collector Emitter Voltage 175 V
Maximum DC Collector Current 0.5 A
Maximum Power Dissipation 35000 mW
Type NPN