SDT7A01 GP BJT

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  • 478 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 150V 10A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 40(Typ) MHz
Type NPN