SK3041 GP BJT

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  • 158 NEW JERSEY SEMICONDUCTOR
  • 34 SOLID STATE DEVICES

Trans GP BJT NPN 35V 4A

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 4 A
Maximum Operating Temperature 140 ᄀC
Maximum Power Dissipation 36000 mW
Maximum Transition Frequency 2 MHz
Type NPN