STE38NB50 MOSFET

Features	Values	Unit
Maximum Gate Source Voltage	±30	V
Maximum Operating Temperature	150	°C
Maximum Power Dissipation	400000	mW
Minimum Operating Temperature	-65	°C
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Dual Source
Maximum Continuous Drain Current	38	A
Maximum Drain Source Voltage	500	V
Number of Elements per Chip	1