TIP111 Darlington BJT
Datasheet: View
Stock
- 30 MATASHITA
- 118 MOTOROLA
- 2209 NATIONAL SEMICONDUCTOR
- 8088 NEW JERSEY SEMICONDUCTOR
- 14 PHILIPS
- 8 RCA
- 3 TEXAS INSTRUMENT
- 265 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@1A@4V|500@2A@4V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 25(Min) | MHz |