TIP122C GP BJT
Datasheet: View
Stock
- 5465 NEW JERSEY SEMICONDUCTOR
- 88 SILICONIX
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 2@12mA@3A|4@20mA@5A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Type | NPN |