Parts | TIP29B | New Jersey Semiconductor

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Trans GP BJT NPN 80V 1A 3-Pin(3+Tab) TO-220 Box

Features	Values	Unit
Category	Bipolar Power
Configuration	Single
Material	Si
Maximum Collector Base Voltage	80	V
Maximum Collector Emitter Saturation Voltage	0.7@125mA@1A	V
Maximum Collector Emitter Voltage	80	V
Maximum DC Collector Current	1	A
Maximum Emitter Base Voltage	5	V
Maximum Operating Temperature	150	°C
Maximum Power Dissipation	2000	mW
Maximum Transition Frequency	3(Min)	MHz
Type	NPN