TIP29C GP BJT
Datasheet: View
Stock
- 3 FAIRCHILD
- 20 GENERAL ELECTRIC
- 63 MOTOROLA
- 16 NATIONAL SEMICONDUCTOR
- 5996 NEW JERSEY SEMICONDUCTOR
- 28 ON SEMI
- 4 PHILIPS
- 20 RCA
- 6 SGS
- 184 ST MICRO
- 67 TEXAS INSTRUMENT
- 20 VORTEX
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@125mA@1A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Type | NPN |