TIP31D GP BJT
Datasheet: View
Stock
- 43 MOTOROLA
- 7181 NEW JERSEY SEMICONDUCTOR
- 11 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 160 | V |
| Maximum Collector Emitter Saturation Voltage | 2.5@750mA@3A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Type | NPN |