TIP32A GP BJT
Datasheet: View
Stock
- 2 ADT
- 23 COLLMER
- 4 FAIRCHILD
- 31 GENERAL ELECTRIC
- 7 MATASHITA
- 79 MOTOROLA
- 52 NATIONAL SEMICONDUCTOR
- 10433 NEW JERSEY SEMICONDUCTOR
- 93 RCA
- 12 SGS
- 1 TEXAS INSTRUMENT
- 12 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 1.2@375mA@3A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | PNP |