TIP32B GP BJT
Datasheet: View
Stock
- 1299 ADT
- 19 FAIRCHILD
- 33 GENERAL ELECTRIC
- 40 MOTOROLA
- 28 NATIONAL SEMICONDUCTOR
- 5536 NEW JERSEY SEMICONDUCTOR
- 2 RCA
- 14 SGS
- 36 SOLID STATE TRANSISTOR
- 6 TEXAS INSTRUMENT
- 89 TEXET
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1.2@375mA@3A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | PNP |