TIP32E GP BJT

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  • 452 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220AB Rail

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1.2@375mA@3A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP