TIP34A GP BJT

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  • 5670 NEW JERSEY SEMICONDUCTOR
  • 4 TEXAS INSTRUMENT
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Trans GP BJT PNP 60V 10A 3-Pin(3+Tab) TO-218

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.3A@3A|4@2.5A@10A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 3500 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP