TIP35B GP BJT

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  • 5245 NEW JERSEY SEMICONDUCTOR
  • 1 ST MICRO
  • 1 TOMSON
  • 4 VORTEX
  • 1 WORLD WIDE

Trans GP BJT NPN 80V 40A 3-Pin(3+Tab) TO-218 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 1.8@1.5A@15A|4@5A@25A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 40 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN