TIP36B GP BJT
Datasheet: View
Stock
- 5226 NEW JERSEY SEMICONDUCTOR
- 1 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1.8@1.5A@15A|4@5A@25A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | PNP |