TIP50 GP BJT
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Stock
- 21 GENERAL ELECTRIC
- 19 HARRIS
- 161 MOTOROLA
- 10869 NEW JERSEY SEMICONDUCTOR
- 394 PECCOR
- 106 PHILIPS
- 17 RCA
- 969 SGS
- 25 SILICON GENERAL
- 7 SOLID STATE TRANSISTOR
- 28600 ST MICRO
- 61 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 500 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@1A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | NPN |