TIP55A GP BJT
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- 368 NEW JERSEY SEMICONDUCTOR
- 2 WORLD WIDE
Trans GP BJT NPN 250V 7.5A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 1.2@1A@5A | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 7.5 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Maximum Power Dissipation | 3000 | mW |
| Type | NPN |