U2T201 Darlington BJT
Datasheet: View
Stock
- 15 API
- 226 NEW JERSEY SEMICONDUCTOR
- 1 UNITRODE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@2mA@1A | V |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum Continuous DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 25000@200mA@5V|15000@500mA@5V|4000@1A@5V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |