UPT215 GP BJT
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- 75 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 100V 2A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@2A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | ﾡC |
| Maximum Power Dissipation | 850 | mW |
| Maximum Transition Frequency | 70(Typ) | MHz |
| Type | NPN |