UPT215 GP BJT

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  • 75 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 2A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 1@0.2A@2A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 850 mW
Maximum Transition Frequency 70(Typ) MHz
Type NPN