RFP12N10L
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24 in stock
Additional information
| Category | Power MOSFET |
|---|---|
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Family | RFP12N10L |
| Material | Si |
| Maximum Continuous Drain Current | 12A |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Operating Temperature | 150°C |
| Maximum Power Dissipation | 60000mW |
| Minimum Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Packaging | Rail |
| Supplier Temperature Grade | N/A |