2N3866A RF BJT

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  • 1 MICROSEMI CONDUCTOR
  • 8 MOTOROLA
  • 426 NEW JERSEY SEMICONDUCTOR

Trans RF BJT NPN 30V 0.4A 3-Pin TO-39

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Features Values Unit
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@20mA@100mA V
Maximum Collector Emitter Voltage 30 V
Maximum Collector Emitter Voltage Range 30 to 40 V
Maximum DC Collector Current 0.4 A
Maximum DC Collector Current Range 0.12 to 0.5 A
Maximum Emitter Base Voltage 3.5 V
Maximum Junction Case Thermal Resistance 60°C/W