2N3999 GP BJT
Datasheet: View
Stock
- 1 API
- 41 NEW JERSEY SEMICONDUCTOR
- 5 PJR
- 5 SILICON TRANSISTOR CORP
- 10 TEXAS INSTRUMENT
- 6 TOMMORROW
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@0.1A@1A|2@0.5A@5A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Type | NPN |