2N4918 GP BJT
Datasheet: View
Stock
- 17 ADVANCED SEMI
- 1 CARSON
- 50 MOTOROLA
- 239 NATIONAL SEMICONDUCTOR
- 33323 NEW JERSEY SEMICONDUCTOR
- 225 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.1A@1A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | PNP |