2N4922 GP BJT
Datasheet: View
Stock
- 2802 MOTOROLA
- 285 NATIONAL SEMICONDUCTOR
- 5666 NEW JERSEY SEMICONDUCTOR
- 10 SGS
- 8 SOLID SATE
- 3 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.1A@1A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | NPN |