2N4923 GP BJT

default part image

Datasheet: View

Stock

  • 7451 MOTOROLA
  • 14 NATIONAL SEMICONDUCTOR
  • 5236 NEW JERSEY SEMICONDUCTOR
  • 792 ON SEMI
  • 13 ST MICRO

Trans GP BJT NPN 80V 1A 3-Pin TO-126 Box

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.6@0.1A@1A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN