2N5075 GP BJT
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- 127 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 2@0.3mA@0.5mA | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Power Dissipation | 40000 | mW |
| Type | NPN |