2N5077 GP BJT

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  • 203 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 250V 3A 3-Pin TO-59

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 2@0.3mA@0.5mA V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 6 V
Maximum Power Dissipation 40000 mW
Type NPN