2N5088 GP BJT
Datasheet: View
Stock
- 1839 CARSON
- 402 CARTER
- 736 CENTAL SEMI
- 687 FAIRCHILD
- 6 GENERAL ELECTRIC
- 1 MOTOROLA
- 13449 NATIONAL SEMICONDUCTOR
- 36306 NEW JERSEY SEMICONDUCTOR
- 55 SOLID STATE TRANSISTOR
- 1 TELEDYNE CRYSTALONICS
- 103 TELEDYNE SEMI
- 7610 WALBERN
- 1 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 35 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 4.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | NPN |