2N5089 GP BJT
Datasheet: View
Stock
- 2116 FAIRCHILD
- 20 IDT
- 205 INTERMETALL
- 801 MICROSEMI CONDUCTOR
- 3361 MOTOROLA
- 22626 NATIONAL SEMICONDUCTOR
- 1743 NEW JERSEY SEMICONDUCTOR
- 92 RCA
- 4953 ROHM
- 918 SGS
- 100 SOLITRON
- 75 TELEDYNE CRYSTALONICS
- 964 WALBERN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 4.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | NPN |