2N5148 GP BJT

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  • 6 FAIRCHILD
  • 96 GENERAL SEMICONDUCTOR
  • 6 NATIONAL SEMICONDUCTOR
  • 1095 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 5A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.46@100mA@1A|5@600mA@3A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN