2N5285 GP BJT

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  • 3 FAIRCHILD
  • 1 GENERAL SEMICONDUCTOR
  • 38 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 5A 3-Pin TO-59

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@0.5mA@2.5mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 6 V
Maximum Power Dissipation 50000 mW
Type NPN