2N5288 GP BJT
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Stock
- 113 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.9@0.5mA@5mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Power Dissipation | 116000 | mW |
| Type | NPN |