2N5294 GP BJT

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  • 23 FAIRCHILD
  • 5 NATIONAL SEMICONDUCTOR
  • 5169 NEW JERSEY SEMICONDUCTOR
  • 154 RCA
  • 21 RF POWER
  • 7 WORLD WIDE

Trans GP BJT NPN 70V 4A 3-Pin(3+Tab) TO-220 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 1@0.05A@0.5A V
Maximum Collector Emitter Voltage 70 V
Maximum DC Collector Current 4 A
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 36000 mW
Maximum Transition Frequency 0.8(Min) MHz
Type NPN