2N5295 GP BJT

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  • 5 FAIRCHILD
  • 43 NATIONAL SEMICONDUCTOR
  • 4089 NEW JERSEY SEMICONDUCTOR
  • 42 RCA
  • 1 RF POWER
  • 116 SOLID SATE

Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 4 A
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 36000 mW
Maximum Transition Frequency 0.8(Min) MHz
Type NPN